Characterization of Ultrathin Dielectrics Grown by Microwave Afterglow Oxygen and N_2O Plasma

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概要

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• Ultrathin dielectrics, oxides and oxynitrides were grown using microwave afterglow oxygen and N_2O plasma at low temperature. N_2O plasma annealing and pretreatment improved the breakdown properties of O_2 plasma oxides. From secondary ion mass spectroscopy (SIMS) analysis, nitrogen was found to be incorporated into oxides effectively by this low-temperature method. Nitrogen content was highest at the oxide surface and decreased toward the oxide/Si interface. This indicates a nitridation mechanism different from the conventional N_2O gas annealing or oxidation processes. The relationships among interface state densities, tunneling current and nitrogen profiles were also investigated by C-V and I-V measurements.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Hwang Heuy-liang

  Department Of Electrical Engineering Tsing-hua University

• Lin J‐y

  I‐shou Univ. Kaohsiung County Twn

• Hsu Klaus

  Department Of Electrical Engineering National Tsing Hua University

• Lin Jian-yang

  Department Of Electronic Engineering National Yunlin University Of Science And Technology

• Chen P‐c

  Hitachi Ltd. Tokyo Jpn

• Chen Po-ching

  Department of Electrical Engineering, National Tsing Hua University

• Hwang Heuy-liang

  Department Of Electrical Engineering National Tsing Hua University

• Lin Jian-yang

  Department of Electrical Engineering, National Chung Cheng Institute of Technology

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