Extremely Low Noise 0.15μm T-Gate AlGaAs/InGaAs Pseudomorphic HEMTs
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Lee Joo-hyoung
Memory R&d Division Hynix Semiconductor Co.
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Park Chul-soon
Compound Semiconductor Department Micro-electronics Technology Laboratory Electronics And Telecommun
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Lee J‐h
Lg Electronics Inst. Technol. Seoul Kor
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Pyun Kwang-eui
Compound Semiconductor Research Department Semiconductor Technology Division Electronics And Telecom
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Pyun Kwang-eui
Compound Semicnductor Research Department Electronics And Telecommunications Research Instiute
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Lee J‐h
Wonkwang Univ. Chonpuk Kor
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Park C‐s
Electronics And Telecommunications Res. Inst. Taejeon Kor
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PARK Byung-Sun
Electronics and Telecommunications Research Institute
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Park Byung-sun
Compound Semiconductor Department Micro-electronics Technology Laboratory Electronics And Telecommun
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Choi Hyun-tae
Compound Semiconductor Department Micro-electronics Technology Laboratory Electronics And Telecommun
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YOON Hyung-Sup
Microwave Devices Team, ETRI
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LEE Jin-Hee
Compound Semiconductor Department, Micro-Electronics Technology Laboratory, Electronics and Telecomm
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YOON Hyung-Sup
Compound Semiconductor Department, Micro-Electronics Technology Laboratory, Electronics and Telecomm
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Lee Ju-Hyeon
School of Electrical Engineering, Wonkwang University
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