Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga_<0.8>In_<0.2>As/Ga_xIn_<1_x>As_yP_<1-y>/Ga_<0.51>In_<0.49>P/GaAs Quantum Well Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-10-15
著者
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Lee J
Korea Inst. Sci. And Technol. Seoul Kor
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Lee June
Materials & Devices Laboratory Samsung Advanced Institute Of Technology
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Park C
School Of Engineering Information And Communications University(icu)
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Park C
Information And Communications Univ. Taejon Kor
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Park C
School Of Engineering Information And Communications University (icu)
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Seong T‐y
Kwangju Inst. Sci. And Technol. (k‐jist) Kwangju Kor
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Seong Tae-yeon
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)
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Pyun Kwang-eui
Compound Semiconductor Research Department Semiconductor Technology Division Electronics And Telecom
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Pyun Kwang-eui
Compound Semicnductor Research Department Electronics And Telecommunications Research Instiute
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Park Kyung
Integrated Optoelectronics Devices Section, Electronics and Telecommunication Research Institute
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Jang D
Electronics And Telecommunications Res. Inst. Taejon Kor
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Lee Jung
Integrated Optoelectronics Devices Section Electronics And Telecommunication Research Institute
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Lee Jung
Compound Semicnductor Research Department Electronics And Telecommunications Research Instiute
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JANG Dong
Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute
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PARK Kyung
Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute
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Park K
Lg Corporate Inst. Technol. Seoul Kor
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Lee J
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology (pos
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Seong Tae-yeon
Department Of Materials Science And Engineering And Centre For Electronic Materials Research Kwangju
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Cho Sung
Compound Semicnductor Research Department Electronics And Telecommunications Research Instiute
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PARK Chul
Compound Semicnductor Research Department, Electronics and Telecommunications Research Instiute
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