Reduction of Threading Dislocations in InGaN/GaN Double Heterostructure through the Introduction of Low-Temperature GaN Intermediate Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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YOO Ji-Beom
Department of Material Engineering, Sungkyunkwan University
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Seong Tae-yeon
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)
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Yoo Ji-beom
Department Of Materials Engineering Sung Kyun Kwan University
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YOON Doo-Hyeb
Optoelectronic Materials Team, Telecommunications Basic Research Institute, Electronics and Telecomm
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LEE Kyu-Seok
Optoelectronic Materials Team, Telecommunications Basic Research Institute, Electronics and Telecomm
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Seong Tae-yeon
Department Of Materials Science And Engineering And Centre For Electronic Materials Research Kwangju
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Lee Kyu-seok
Optoelectronic Materials Team Telecommunications Basic Research Institute Electronics And Telecommun
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Yoon Doo-hyeb
Optoelectronic Materials Team Telecommunications Basic Research Institute Electronics And Telecommun
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Yoo Ji-beom
Department Of Material Engineering Sungkyunkwan University
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