Ag/Ni/Ag Multilayer Reflector for GaN-Based Vertical Light-Emitting Diode
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概要
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We investigate the effect of Ni insertion on the electrical and thermal properties of Ag-based reflectors for GaN-based light emitting diodes (LEDs). It is shown that after annealing at 500 °C, the surface of Ag only sample becomes significantly roughened due to agglomeration, whereas the surface of Ni-inserted Ag sample get roughened with elongated Ag hillocks on an {\sim}100-nm-thick Ag film. The Ni-inserted Ag contacts show higher reflectance (at 460 nm) than the Ag only sample after annealing at 500 °C. The 500-°C-annealed Ni-inserted Ag samples exhibit lower specific contact resistance than the annealed Ag only contacts. LEDs fabricated with the 500-°C-annealed Ni-inserted Ag contact give lower forward-bias voltage and series resistance as compared to those of LEDs with the 500-°C-annealed Ag only contact. The LEDs with the 500-°C-annealed Ni-inserted Ag contact exhibit 18% higher light output power (at 20 mA) than the LEDs with the Ag only contacts annealed at 500 °C. Based on the X-ray photoelectron spectroscopy and scanning electron microscopy results, the temperature dependence of the electrical characteristics of the Ni-inserted Ag contacts is described and discussed.
- 2013-05-25
著者
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Seong Tae-yeon
Department Of Materials Science And Engineering And Centre For Electronic Materials Research Kwangju
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Jeon Joon-Woo
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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Sung Jun-Suk
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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Yum Woong-Sun
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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Jin Sungho
Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093, U.S.A.
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