Ag/Ni/Ag Multilayer Reflector for GaN-Based Vertical Light-Emitting Diode
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概要
著者
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Seong Tae-yeon
Department Of Materials Science And Engineering And Centre For Electronic Materials Research Kwangju
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Jeon Joon-Woo
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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Sung Jun-Suk
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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Yum Woong-Sun
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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Jin Sungho
Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093, U.S.A.
関連論文
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- Low Resistance and Thermally Stable Pt/W/Au Ohmic Contacts to P-Type GaN
- High Quality Nonalloyed Pt Ohmic Contacts to P-Type GaN Using Various Surface Treatment
- Investigation into the Role of Low-Temperature GaN in n-GaN/InGaN/p-GaN Double-Heterostructure Light-Emitting Diodes
- Reduction of Threading Dislocations in InGaN/GaN Double Heterostructure through the Introduction of Low-Temperature GaN Intermediate Layer
- Atomic Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching
- Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering
- Formation of Natural InAlAs Vertical Superlattices
- Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes
- Characterisation of GaNP Layers Grown on (0001) GaN/Sapphire by Gas Source Molecular Beam Epitaxy
- Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga_In_As/Ga_xIn_As_yP_/Ga_In_P/GaAs Quantum Well Structure
- Electrical and Structural Properties of Ti/Au Ohmic Contacts on N-ZnO:Al
- Ordering and Associated Domain Structures in Zinc and Silicon Doped Ga_In_P and Ga_xInAs_yP_ Layers Grown on GaAs by Metalorganic Vapour Phase Epitaxy
- Effects of Fe Film Thickness and Pretreatments on the Growth Behaviours of Carbon Nanotubes on Fe-doped (001) Si Substrates
- Improved output power of GaN-based vertical light emitting diodes fabricated with current blocking region formed by O2 plasma treatment
- Effects of a SiO_2 Capping Layer on the Electrical Properties and Morphology of Nickel Silicides
- High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas
- Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer
- Modulated Structures and Atomic Ordering in InPySb1-y Layers Grown by Organometallic Vapor Phase Epitaxy
- Ag/Ni/Ag Multilayer Reflector for GaN-Based Vertical Light-Emitting Diode
- Ag/Ni/Ag Multilayer Reflector for GaN-Based Vertical Light-Emitting Diode