Improved output power of GaN-based vertical light emitting diodes fabricated with current blocking region formed by O2 plasma treatment
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Seong Tae-yeon
Department Of Materials Science And Engineering And Centre For Electronic Materials Research Kwangju
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Kim Eun
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Son Sung
Department Of Rehabilitation Science Graduate School Daegu University
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LEE Sang
Department of Acupuncture & Moxibustion, College of Oriental Medicine, Kyung Hee University
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Choi Kwang
Department of LED Business, Chip Development Group, LGIT, Paju, Gyeonggi 413-901, Korea
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Jeong Hwan
Department of LED Business, Chip Development Group, LGIT, Paju, Gyeonggi 413-901, Korea
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Son Hyo
Department of LED Business, Chip Development Group, LGIT, Paju, Gyeonggi 413-901, Korea
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Song June
Department of LED Business, Chip Development Group, LGIT, Paju, Gyeonggi 413-901, Korea
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