Transmission Electron Microscopy Study on the Crystallization of Sb–Se–Te Ternary Alloys
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概要
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The microstructure of Sb–Se–Te ternary alloy thin films annealed at 220, 230, and 300 °C by rapid thermal annealing (RTA) was investigated using high-resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD) analysis. Compared to the $T_{\text{m}}$ of Ge2Sb2Te5 (${\sim}616$ °C), the lower $T_{\text{m}}$ of the Sb–Se–Te (417 °C) thin film can contribute toward reducing power consumption for the reset process of phase change materials. The horizontal long grains — grown along the interface in a fully crystallized Sb–Se–Te thin film sample and annealed at 300 °C for 10 min — were hexagonal structured Sb2SeTe2 with 15 layers; the $c$-axis was perpendicular to the substrate.
- 2009-10-25
著者
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Yoon Jong
Department of Biochemistry and Molecular Biology, College of Pharmacy, Sungkyunkwan University
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Kim Eun
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Lee Jeong
Department Of Anesthesiology And Pain Medicine Yonsei University College Of Medicine
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Yoon Jong
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea
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Lee Jeong
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea
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Kim Eun
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea
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