Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Efffect Transistors Using a Pt/SrBi_2Ta_2O_9/Y_2O_3/Si Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Y
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
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Kim Y‐h
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Lim M‐h
Korea Advanced Inst. Sci. And Technol. Taejon Kor
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LEE Ho
Semiconductor Materials Laboratory, Korea Institute of Science and Technology
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LIM Myoung-Ho
Department of Electrical and Computer Engineering, Colorado State University at Colorado Spurings
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KALKUR T.S.
Department of Electrical and Computer Engineering, Colorado State University at Colorado Spurings
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CHOH Sung
Department of Physics, Korea University
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Choh S
Department Of Physics Korea University
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Choh Sung
Department Of Physics Korea University
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Kalkur T.s.
Department Of Electrical And Computer Engineering Colorado State University At Colorado Spurings
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Kim Yong
Korea Institute Of Science And Technology
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Lee H
Max Planck Inst. Microstructure Physics Halle/saale Deu
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