Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
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概要
- 論文の詳細を見る
It is well known that ferroelectric properties of Pt/SBT and Pt/SBN thin films are degraded due to the Pt catalytic reaction after H_2 annaealing. However, sometimes SBT and SBN film itself may be degraded after the H_2 annaealing. In this work, we have studied interface trap between SBT (or SBN) and Si, effects of bias stress on flat band voltage and asymmetric hystersis shift before and after H_2 annaealing at curie temperature and higher temperature than curie point. As an alternative top electrode, ft and IrO_2 /SBT (or SBN)/Si structures have been investigated with H_2 annaealing. Also, we will discuss changes in electrical properties after the recovery process.
- 社団法人電子情報通信学会の論文
- 2002-06-24
著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Chun
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim S
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
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Kim Seong-il
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Seong-ii
Semiconductor Materials Research Center Korea Institute Of Science And Technology
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Kim Chun
Semiconductor Lab.
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Kim Ik-soo
Semiconductor Lab.
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Lee Chang
Dept. Of Interaction Design. Graduate School Of Techno Design Kookmin University
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Choi Hoon
Semiconductor Lab.
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Lee Chang
Department Of Nano And Electronic Physics Kookmin University
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Lee Chang
Dept. Of Civil Engineering University Of Seoul
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Lee C.w.
Department Of Nano And Electronic Physics Kookmin University
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Kim Yong
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
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Kim S‐i
Korea Inst. Sci. And Technol. Seoul Kor
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Lee C
Department Of Nano And Electronic Physics Kookmin University
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