N2+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
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概要
- 論文の詳細を見る
We have suggested N2+ ion modification method to improve the thermal stability of Mo thin film by implanting 3 ×1017 N2+ ions/cm2 with very low acceleration energy of 20 keV. The Mo film modified by N2+ ions (Mo–N2+) keeps microcrystalline after annealing at 600°C and performs excellent diffusion barrier against Cu atoms at 700°C for 30 min. The stress evolution of the Mo–N2+ thin film during the annealing process indicates that highly compressive stress changes to low tensile stress at 600 °C for 30 min.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-05-15
著者
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Dong
Semiconductor Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Gyeonggi-do 446-712, Korea
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PARK Jong-Wan
Department of Biomedical Sciences, Seoul National University, College of Medicine
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Park Jong-Wan
Department of Metallurgical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul, 133-791, Korea
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