Memory Effect in an Aluminum Single-Electron Floating-Node Memory Cell
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-08-15
著者
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Choi J
Chungbuk National Univ. Chungbuk Kor
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Park J‐w
Sungkyunkwan Univ. Suwon Kor
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Kim J
Univ. Tokyo Tokyo Jpn
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Kim J‐j
Univ. Tokyo Tokyo Jpn
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KIM Jinhee
Electron Devices Laboratory, Korea Research Institute of Standards and Science
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KIM Ju-Jin
Department of Physics, Chonbuk National University
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LEE Jeong-O
Department of Physics, Chonbuk National University
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YOO Kyung-Hwa
Electronic Device Group, Korea Research Institute of Standards and Science
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PARK Jong
Electronic Device Group, Korea Research Institute of Standards and Science
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OH Sangchul
Electricity Group, Korea Research Institute of Standards and Science
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PARK Jong-Wan
Department of Physics, Chungbuk National University
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CHOI Jeong-Bum
Department of Physics, Chonbuk National University
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PARK Se
Electricity Group, Korea Research Institute of Standards and Science
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Kim J
Electronics And Telecommunication Res. Inst. Daejeon Kor
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Park Jong
Electronic Device Group Korea Research Institute Of Standards And Science
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Kim Ju-jin
Department Of Physics Chonbuk National University
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Lee J‐o
Korea Res. Inst. Standards And Sci. Taejon Kor
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Yoo K‐h
Korea Res. Inst. Standards And Sci. Taejon Kor
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Park Se
Electricity Group Korea Research Institute Of Standards And Science
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Oh Sangchul
Electricity Group Korea Research Institute Of Standards And Science
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Park Jong-wan
Department Of Metallugical Engineering Hanyang University
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Choi Jeong-bum
Department Of Physics Chonbuk National University
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Park Jong-Wan
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul 133-791, Korea
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PARK Jong-Wan
Department of Biomedical Sciences, Seoul National University, College of Medicine
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Yoo Kyung-Hwa
Electricity Group, Korea Research Institute of Standards and Science,Yusong-gu, Taejon, 305-600, Korea
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Kim Jinhee
Electricity Group, Korea Research Institute of Standards and Science,Yusong-gu, Taejon, 305-600, Korea
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