Electronic Transport through Aromatic Thiol Monolayer Assembled in the Nano Via-Hole Electrode

概要

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Nano via-hole devices were fabricated by the e-beam patterning of holes on a SiNx insulating layer and used as electronic test platforms for the characterization of the electrical properties of molecules. Conditions of RIE were controlled to produce bowl-shaped nano size via-holes such that the diameter of the bottom opening was less than approximately 50 nm when the top diameter was 100 nm. After forming a self-assembled monolayer on the bottom electrode inside the via-hole, a top metal electrode was deposited to produce an MIM type device. When dodecanethiol was used, the fabricated device showed a current density of $1.3\times 10^{3}$ A/cm2 at 1.0 V, which was in the same order of magnitude as the previously reported value. When aromatic thiols were used, most devices showed diode-like behaviors with a higher current density than the dodecanethiol, and a few showed NDR-like characteristics.
2005-01-15