Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2 Plasma Treatment on the SiNx Gate Insulator

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In this study, we investigated the role of processing parameters on the electrical characteristics of amorphous In–Ga–Zn–O (a-IGZO) thin film transistors (TFTs) fabricated using DC magnetron sputtering at room temperature. Processing parameters including the oxygen partial pressure, annealing temperature, and channel thickness have a great influence on TFT performance and better devices are obtained at a low oxygen partial pressure, annealing at 200 °C, and a low channel thickness. We attempted to improve the a-IGZO TFT performance and stability under a gate bias stress using O2 plasma treatment. With an O2 plasma treated gate insulator, remarkable properties including excellent bias stability as well as a field effect mobility ($\mu_{\text{FE}}$) of 11.5 cm2 V-1 s-1, a subthreshold swing ($S$) of 0.59 V/decade, a turn-on voltage ($V_{\text{ON}}$) of $-1.3$ V, and an on/off current ratio ($I_{\text{ON}}/I_{\text{OFF}}$) of $10^{5}$ were achieved.
2010-08-25