Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation
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概要
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We examined titanium oxide films and their barrier characteristics. Titanium oxide films were deposited at room temperature with electron cyclotron resonance plasma power of 300 W. We measured the growth rate of the titanium oxide film to be 1.8 Å/cycle. Barrier layers on poly(ether sulfon) (PES) substrates were observed to provide activation energy for water permeation. Activation energy of 12.4 kJ/mol was added by applying a titanium oxide coating with a thickness of 100 nm. The passivation performance of the titanium oxide film was also investigated using organic light-emitting diodes (OLEDs). The relative luminance of a 400-nm-thick-coated OLED device was diminished by 11.6% for 20 h.
- 2010-08-25
著者
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Kim Jay-Jung
Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kang Byung-Woo
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kim Woong-Sun
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Park Jong-Wan
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul 133-791, Korea
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Hwang Chang-Mook
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Moon Dae-Yong
Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Park Jae-Gun
Department of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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PARK Jong-Wan
Department of Biomedical Sciences, Seoul National University, College of Medicine
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Park Jong-Wan
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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