Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi_2Ta_2O_9-Y_2O_3-Si Structure
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Y
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
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Kim Y‐h
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Lee Chang
Department Of Physics Kook Min University
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Lee Chang
Semiconductor Materials Laboratory Korea Institute Of Science And Technology:(present Address)depart
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Lim M‐h
Korea Advanced Inst. Sci. And Technol. Taejon Kor
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Lee C
Opto-mechatronics Team Digital Media R&d Center Samsung Electronics Co. Ltd.
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LEE Ho
Semiconductor Materials Laboratory, Korea Institute of Science and Technology
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LIM Myoung-Ho
Department of Electrical and Computer Engineering, Colorado State University at Colorado Spurings
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KALKUR T.
Department of Electrical and Computer Eng., Colorado State University at Colorado Springs
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Kalkur T.s.
Department Of Electrical And Computer Engineering Colorado State University At Colorado Spurings
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Kim Yong
Korea Institute Of Science And Technology
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Lee H
Max Planck Inst. Microstructure Physics Halle/saale Deu
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