Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
スポンサーリンク
概要
- 論文の詳細を見る
We have deposited the W-N diffusion barrier with pulse plasma enhanced atomic layer deposition (PPALD) method by using WF_6 and NH_3 . It is very difficult to deposit W-N film with ALD method by using WF_6 and NH_3 to the fast Si catalytic reaction with WF_6 since the deposition rate is as low as 0.5 Å/cycle. However, using PPALD method the N content is uniformly distributed into the W-N film. The deposition rate per cycle is 〜2.2 Å/cycle in the ALD temperature window of 350〜400℃. As a diffusion barrier for the Cu interconnect, high resolution-TEM reveals that 22 nm thick W-N successfully prevents Cu diffusion after annealing at 600℃ for 30 min.
- 2002-06-24
著者
-
Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
-
Kim Yong
Semiconductor Materials And Devices Lab.
-
Sim Hyunsang
Semiconductor Materials and Devices Lab.
関連論文
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- Direct Transport Measurements through an Ensemble of INAS Self-assembled Quantum Dots
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
- Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn
- Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
- Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
- Improvement of the Reliability of a Cu/W-N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W-N Thin Film
- ED2000-66 / SDM2000-66 Improvement of Memory windows in YMnO_3/Si Ferroelectric Gate FET
- ED2000-66 / SDM2000-66 Improvement of Memory windows in YMnO_3/Si Ferroelectric Gate FET
- Tungsten Nanodot Arrays Patterned Using Diblock Copolymer Templates
- Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
- Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
- Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN
- Electrical Characteristics of Pt/SrBi_2 Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
- Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope
- Effects of Morphological Changes of Pt/SrBi_2Ta_2O_9 Interface on the Electrical Properties of Ferroelectric Capacitor
- Electrical Properties of Pt/SrBi_2Ta_2O_9/CeO_2/SiO_2/Si Structure for Nondestruetive Readout Memory
- N_2^+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Efffect Transistors Using a Pt/SrBi_2Ta_2O_9/Y_2O_3/Si Structure
- Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi_2Ta_2O_9-Y_2O_3-Si Structure
- The Characteristics of Nitrogen Implanted Tungsten Film as a New Diffusion Barrier for Metal Organic Chemical Vapor Deposited Cu Metallization
- Characteristics of Quantum wire structures grown by low pressure MOCVD
- Characteristics of Quantum wire structures grown by low pressure MOCVD
- Ellipsometric Study of Self-Assembled InAs/GaAs Quantum Dots
- Highly Conductive Tungsten Thin Films Prepared by the Plasma-Assisted Silane Reduction Process
- Effects of NH_3 Plasma Treatment on Methyl Silsequioxane for Copper Multi-Level Interconnect(Semiconductors)
- Electrical Characteristics of Pt/SrBi_2Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
- Performance of the Plasma-Deposited Tungsten Nitride Diffusion Barrier for Al and Au Metallization
- Advantages of RuO_x Bottom Electrode in the Dielectric and Leakage Characteristics of (Ba,Sr)TiO_3 Capacitor
- A Proposal of Pt/SrBi_2Ta_2O_9/CeO_2/Si Structure for Non Destructive Read Out Memory Devices
- High Performance of W-B-N Schottky Contact to GaAs
- Transmission Electron Microscopy Study on the Crystallization of Sb–Se–Te Ternary Alloys
- A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
- Microstructural Investigation of SexTe100-x Thin Films Deposited on Si(100) Substrates by X-ray Diffractometer and Transmission Electron Microscopy Analysis
- Effect of Nitrogen Implantation with Low Dose on Thermomechanical Properties and Microstructure of Ge2Sb2Te5 Films
- Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge2Sb2Te5
- Phase Transition Behavior of Ge–Bi–Te Thin Films from an NaCl to Rhombohedral Structure
- Metal Oxide Semiconductor Field Effect Transistor Characteristics with Iridium Gate Electrode on Atomic Layer Deposited ZrO2 High-$k$ Dielectrics
- Improvement of the Reliability of a Cu/W–N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W–N Thin Film
- N2+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
- Electrical Properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si Structure for Nondestructive Readout Memory
- Growth and Characterization of Triangular InGaAs/GaAs Quantum Wire Structures Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Investigations of the Air Gap Embedded Green InGaN/GaN Light-Emitting Diodes