Improvement of the Reliability of a Cu/W-N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W-N Thin Film

スポンサーリンク

概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-03-01

著者

• Kim Yong

  Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology

• Park J‐w

  Pusan National Univ. Busan Kor

• Kim Y

  Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology

• Kim Seong-il

  Semiconductor Devices Laboratory Korea Institute Of Science And Technology

• Kim Seong-il

  Semiconductor Materials Laboratory Korea Institute Of Science And Technology

• Kim Y‐h

  Semiconductor Devices Laboratory Korea Institute Of Science And Technology

• Sim H

  Korea Inst. Of Sci. And Technol. Seoul Kor

• Kim Yong

  Semiconductor Devices Laboratory Korea Institute Of Science And Technology

• Kim D

  Semiconductor Materials Laboratory Korea Institute Of Science And Technology

• Kim Dong

  Semiconductor Materials Research Center Korea Institute Of Science And Technology

• Park Jong-wan

  Division Of Materials Science And Engineering Hanyang University

• SIM Hyun

  Semiconductor Materials and Devices Lab., Korea Institute of Science and Technology

• LEE Seoghyeong

  Division of Materials Science and Engineering, Hanyang University

• Lee Seoghyeong

  Division Of Materials Science And Engineering Hanyang University

• Sim Hyun

  Semiconductor Devices Laboratory Korea Institute Of Science And Technology

• Kim S

  Semiconductor Devices Laboratory Korea Institute Of Science And Technology

• Kim Dong

  Semiconductor Materials Laboratory Korea Institute Of Science And Technology

• Kim Yong

  Korea Institute Of Science And Technology

• Park J‐w

  Department Of Pharmacology Seoul National University College Of Medicine

• Sim Hyun

  Semiconductor Materials Laboratory Korea Institute Of Science And Technology

• Kim Dong

  Semiconductor Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Gyeonggi-do 446-712, Korea

関連論文

• A design of novel IGBT with oblique trench gate (Silicon devices and materials)
• Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
• Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
• Direct Transport Measurements through an Ensemble of INAS Self-assembled Quantum Dots
• Facet Evolution of Al_Ga_As/GaAs Multilayers Grown on Mesa-Patterned GaAs Substrate
• A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
• A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
• Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
• Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
• Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
• Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
• Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn
• Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
• Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
• Diffusion Barrier Property of Molybdenum Nitride Films for Copper Metallization
• A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
• Metal Oxide Semiconductor Field Effect Transistor Characteristics with Iridium Gate Electrode on Atomic Layer Deposited ZrO_2 High-k Dielectrics
• Improvement of the Reliability of a Cu/W-N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W-N Thin Film
• ED2000-66 / SDM2000-66 Improvement of Memory windows in YMnO_3/Si Ferroelectric Gate FET
• ED2000-66 / SDM2000-66 Improvement of Memory windows in YMnO_3/Si Ferroelectric Gate FET
• Tungsten Nanodot Arrays Patterned Using Diblock Copolymer Templates
• Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
• Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
• Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN
• Electrical Characteristics of Pt/SrBi_2 Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
• Effects of NH_3 Plasma Treatment of the Substrate on Metal Organic Chemical Vapor Deposition of Copper Films
• Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
• Growth and Characterization of Triangular InGaAs/GaAs Quantum Wire Structures Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope
• Effects of Morphological Changes of Pt/SrBi_2Ta_2O_9 Interface on the Electrical Properties of Ferroelectric Capacitor
• Electrical Properties of Pt/SrBi_2Ta_2O_9/CeO_2/SiO_2/Si Structure for Nondestruetive Readout Memory
• N_2^+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
• Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Efffect Transistors Using a Pt/SrBi_2Ta_2O_9/Y_2O_3/Si Structure
• Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi_2Ta_2O_9-Y_2O_3-Si Structure
• The Characteristics of Nitrogen Implanted Tungsten Film as a New Diffusion Barrier for Metal Organic Chemical Vapor Deposited Cu Metallization
• Curcumin attenuates cytochrome P450 induction in response to 2,3,7,8-tetrachlorodibenzo-p-dioxin by ROS-dependently degrading AhR and ARNT
• Characteristics of Quantum wire structures grown by low pressure MOCVD
• Characteristics of Quantum wire structures grown by low pressure MOCVD
• Ellipsometric Study of Self-Assembled InAs/GaAs Quantum Dots
• Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
• Effects of Chemical Interaction between Ta and SiOF on the Crystallinity of Cu and Ta in Cu/Ta/SiOF Films
• Highly Conductive Tungsten Thin Films Prepared by the Plasma-Assisted Silane Reduction Process
• Effects of NH_3 Plasma Treatment on Methyl Silsequioxane for Copper Multi-Level Interconnect(Semiconductors)
• Hypoxia-Inducible Factor 1-Related Diseases and Prospective Therapeutic Tools
• Electroless Copper Deposition on H_2 Plasma-Treated TaN_x (x = 0-1) Diffusion Barriers
• Microstructure Evolution of the TaN_x (x = 0-1) Diffusion Barriers by NH_3 Plasma Treatment for the Electroless Copper Deposition
• Electrical Characteristics of Pt/SrBi_2Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
• Performance of the Plasma-Deposited Tungsten Nitride Diffusion Barrier for Al and Au Metallization
• Surface Modification of Low Dielectric Fluorinated Amorphous Carbon Films by Nitrogen Plasma Treatment : Electrical Properties of Condensed Matter
• Effect of Post-Plasma Treatment Time on the Properties of Low Dielectric Fluorinated Amorphous Carbon Films
• Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge_2Sb_2Te_5
• Advantages of RuO_x Bottom Electrode in the Dielectric and Leakage Characteristics of (Ba,Sr)TiO_3 Capacitor
• Radio-Frequency Electrical Characteristics of Single Layer Graphene
• Large Exchange Enhancement of Electron-Phonon Coupling as a Possible Mechanism of High T_c Superconductivity
• A Proposal of Pt/SrBi_2Ta_2O_9/CeO_2/Si Structure for Non Destructive Read Out Memory Devices
• High Performance of W-B-N Schottky Contact to GaAs
• Effect of Post-Plasma Treatment Time on the Properties of Low Dielectric Fluorinated Amorphous Carbon Films
• Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
• Transmission Electron Microscopy Study on the Crystallization of Sb–Se–Te Ternary Alloys
• A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
• Microstructural Investigation of SexTe100-x Thin Films Deposited on Si(100) Substrates by X-ray Diffractometer and Transmission Electron Microscopy Analysis
• Effect of Nitrogen Implantation with Low Dose on Thermomechanical Properties and Microstructure of Ge2Sb2Te5 Films
• Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge2Sb2Te5
• Phase Transition Behavior of Ge–Bi–Te Thin Films from an NaCl to Rhombohedral Structure
• Metal Oxide Semiconductor Field Effect Transistor Characteristics with Iridium Gate Electrode on Atomic Layer Deposited ZrO2 High-$k$ Dielectrics
• Improvement of the Reliability of a Cu/W–N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W–N Thin Film
• N2+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
• Electrical Properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si Structure for Nondestructive Readout Memory
• Growth and Characterization of Triangular InGaAs/GaAs Quantum Wire Structures Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Microstructure Evolution of the TaNx ($x=0--1$) Diffusion Barriers by NH3 Plasma Treatment for the Electroless Copper Deposition
• Investigations of the Air Gap Embedded Green InGaN/GaN Light-Emitting Diodes

もっと見る 閉じる

スポンサーリンク