Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
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概要
- 論文の詳細を見る
The effects of post plasma treatment on the dielectric properties and reliability of fluorine-doped silicon oxide (SiOF) films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) are studied. Also, the thermal stability of an electrodeposited Cu/sputtered Ta interconnect system with SiOF intermetal dielectrics was examined by annealing in a vacuum furnace. The stability of the dielectric constant of SiOF films was found to be improved by O2 post plasma treatment. Surface modification by the plasma treatment was effective for the prevention of water absorption and stabilization of the dielectric constant. The Cu/Ta/SiOF/Si system was thermally stable up to 500$^\circ$C for 3 h. For the Cu/Ta/SiOF/Si multilayer structure, the plasma treatment seemed to play a significant role in suppressing the interdiffusion between SiOF and metal interconnects. By $C$–$V$ measurement, the electrical stability of the Cu/Ta/SiOF/Si multilayer structure was found to be stable up to 500$^\circ$C for 3 h.
- 2001-01-15
著者
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Park Jong-wan
Division Of Materials Science And Engineering Hanyang University
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Lee Seoghyeong
Tw-team Samsung Electronics
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Yang Sung-hoon
Division Of Materials Science And Engineering Hanyang University
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Park Jong-Wan
Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul, 133-791, Korea
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Moon Hee-Soo
Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul, 133-791, Korea
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Lee Seoghyeong
TW-Team, Samsung Electronics, Kyunggi-Do 449-711, Korea
関連論文
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- Improvement of the Reliability of a Cu/W–N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W–N Thin Film
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