Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-01-15
著者
-
Park J‐w
Pusan National Univ. Busan Kor
-
Park Jong-wan
Division Of Materials Science And Engineering Hanyang University
-
Lee Seoghyeong
Tw-team Samsung Electronics
-
YANG Sung-Hoon
Division of Materials Science and Engineering, Hanyang University
-
MOON Hee-oo
Division of Materials Science and Engineering, Hanyang University
関連論文
- Diffusion Barrier Property of Molybdenum Nitride Films for Copper Metallization
- Improvement of the Reliability of a Cu/W-N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W-N Thin Film
- N_2^+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
- Curcumin attenuates cytochrome P450 induction in response to 2,3,7,8-tetrachlorodibenzo-p-dioxin by ROS-dependently degrading AhR and ARNT
- Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
- Effects of Chemical Interaction between Ta and SiOF on the Crystallinity of Cu and Ta in Cu/Ta/SiOF Films
- Hypoxia-Inducible Factor 1-Related Diseases and Prospective Therapeutic Tools
- Electroless Copper Deposition on H_2 Plasma-Treated TaN_x (x = 0-1) Diffusion Barriers
- Microstructure Evolution of the TaN_x (x = 0-1) Diffusion Barriers by NH_3 Plasma Treatment for the Electroless Copper Deposition
- Surface Modification of Low Dielectric Fluorinated Amorphous Carbon Films by Nitrogen Plasma Treatment : Electrical Properties of Condensed Matter
- Effect of Post-Plasma Treatment Time on the Properties of Low Dielectric Fluorinated Amorphous Carbon Films
- Effect of Post-Plasma Treatment Time on the Properties of Low Dielectric Fluorinated Amorphous Carbon Films
- Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
- Improvement of the Reliability of a Cu/W–N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W–N Thin Film
- Microstructure Evolution of the TaNx ($x=0--1$) Diffusion Barriers by NH3 Plasma Treatment for the Electroless Copper Deposition