Surface Modification of Low Dielectric Fluorinated Amorphous Carbon Films by Nitrogen Plasma Treatment : Electrical Properties of Condensed Matter

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-10-15

著者

• Park Jong-wan

  Division Of Materials Science And Engineering Hanyang University

• YANG Sung-Hoon

  Division of Materials Science and Engineering, Hanyang University

• KIM Heondo

  Division of Materials Science and Engineering, Hanyang University

• Kim Heondo

  Division Of Materials Science And Engineering Hanyang University

• Yang Sung-hoon

  Division Of Materials Science And Engineering Hanyang University

• Park Jong-Wan

  Division of Materials Science and Engineering, Hanyang University

関連論文

• Improvement of the Reliability of a Cu/W-N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W-N Thin Film
• Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
• Electroless Copper Deposition on H_2 Plasma-Treated TaN_x (x = 0-1) Diffusion Barriers
• Microstructure Evolution of the TaN_x (x = 0-1) Diffusion Barriers by NH_3 Plasma Treatment for the Electroless Copper Deposition
• Surface Modification of Low Dielectric Fluorinated Amorphous Carbon Films by Nitrogen Plasma Treatment : Electrical Properties of Condensed Matter
• Effect of Post-Plasma Treatment Time on the Properties of Low Dielectric Fluorinated Amorphous Carbon Films
• Effect of Post-Plasma Treatment Time on the Properties of Low Dielectric Fluorinated Amorphous Carbon Films
• Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
• Improvement of the Reliability of a Cu/W–N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W–N Thin Film
• Microstructure Evolution of the TaNx ($x=0--1$) Diffusion Barriers by NH3 Plasma Treatment for the Electroless Copper Deposition

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