Electrical Properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si Structure for Nondestructive Readout Memory
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概要
- 論文の詳細を見る
Memory window and leakage current density of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure have been investigated for non destructive read out memory. Coercive field that decisively affects on the memory window becomes greater by the interposition of the CeO2 insulator between SrBi2Ta2O9 and SiO2 and thus the memory window also increases with an electric field to the SrBi2Ta2O9. A typical value of memory window for Pt/SrBi2Ta2O9(140 nm)/CeO2/SiO2/Si is in the range of 0.5 – 3.0 V, which is high enough for the non destructive read out memory, at the applied voltage of 3 – 9 V. The leakage current density is remained at 3 ×10-8 A/cm2 until the applied voltage increases up to 10 V.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-08-15
著者
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Choi In
Department Of Anesthesiology And Pain Medicine Asan Medical Center University Of Ulsan College Of Me
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Byong
Department Of Fiber And Polymer Engineering Hanyang University
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Shin Dong
Semiconductor Materials Laboratory Korea Institute Of Science And Technology
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LEE Ho
Semiconductor Materials Laboratory, Korea Institute of Science and Technology
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Kim Byong
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
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Shin Dong
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea
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