Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
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概要
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We have deposited the W-N diffusion barrier with pulse plasma enhanced atomic layer deposition (PPALD) method by using WF_6 and NH_3. It is very difficult to deposit W-N film with ALD method by using WF_6 and NH_3 due to the fast Si catalytic reaction with WF_6 since the deposition rate is as low as 0.5 Å/cycle. However, using PPALD method the N content is uniformly distributed into the W-N film. The deposition rate per cycle is 〜2.2 Å/cycle in the ALD temperature window of 350〜400℃. As a diffusion barrier for the Cu interconnect, high resolution-TEM reveals that 22 nm thick W-N successfully prevents Cu diffusion after annealing at 600℃ for 30 min.
- 2002-06-24
著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Yong
Semiconductor Materials And Devices Lab.
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Sim Hyunsang
Semiconductor Materials and Devices Lab.
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