Characteristics of Quantum wire structures grown by low pressure MOCVD
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概要
- 論文の詳細を見る
Noble quantum wire structures were grown by low pressure metalorganic chemical vapor deposition (MOCVD) by using selective area epitaxy. We have investigated the effects of various growth parameters. such as growth rate, V/III ratio, growth temperature, and direction of the opening stripes in selective epitaxy. Various GaAs/AlGaAs multilayer and InGaAs/GaAs quantum wire structures with sharp tips and smooth sidewalls were grown on SiO_2 masked GaAs substrates. The MOCVD growth was carried out in a horizontal, lamp heated reactor at a low pressure of 76 torr. To analyze the growth behavior and optical properties, scanning electron microscopy and temperature dependent photoluminescence were used.
- 社団法人電子情報通信学会の論文
- 2002-06-26
著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Y
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
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Kim S
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
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Kim Seong-il
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Seong-ii
Semiconductor Materials Research Center Korea Institute Of Science And Technology
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Kim Y‐h
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Young
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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KIM Young-Hwan
Semiconductor Devices Laboratory, Korea Institute of Science and Technology
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Kim S‐i
Korea Inst. Sci. And Technol. Seoul Kor
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Kim Young-hwan
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Yong
Korea Institute Of Science And Technology
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