ED2000-71 / SDM2000-71 SiGe HBT Technology and Applications for Communication

概要

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An SiGe HBT having a polysilicon-filled trench isolation, a LOCOS (LOCal Oxidation of Silicon), an SiGe base deposited by an atmospheric- or reduced-pressure CVD, and an in-situ doped polysilicon emitter electrode has been developed. For 0.8〜1.0 μm emitter, f_T and f_<max> in the range of 30〜90 GHz and 30〜60 GHz respectively has been achieved for BV_<CEO> in the range of 2.5〜9.0 V. Noise of 0.8 dB at 2 GHz and 0.8 dB at 10 GHz was obtained. For a 0.8×1.0 μm^2 emitter, f_T and f_<max> of 30 GHz and 50 GHz at a collector current of 100 μA. Using the present device, RFICs to be used in the IMT2000 mobile phone, the DSRC (Dedicated Short Range Communication) for an Electronic Toll Collection in Intelligent Transport System, and the Bluetooth have been introduced.
社団法人電子情報通信学会の論文
2000-06-22