Simulation for Reset Operation of Ge2Sb2Te5 Phase-Change Random Access Memory
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概要
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The reset operation of phase-change random access memory (PRAM) was simulated by the finite element method. The dominant variables for optimizing reset operation were proved to be not only the reset current but also the shape of the formed amorphous region in the writing layer. The connection of the electrical resistances through the crystal and/or the formed amorphous region in the writing layer was found to depend on the shape of the formed amorphous region. The classical nucleation theory and Monte Carlo method were used to evaluate the nucleation during the quenching step by simulation. It is considered that considerable nucleation occurs during the quenching step. It is also predicted that nuclei formed during the quenching step may reduce the incubation time in the crystallization step.
- 2005-08-15
著者
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Kim Young
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Kim Sung
Department Of Anatomy
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Park Young
Semicondactor Materials Laboratory Korea Insrirute Of Science And Technology
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Lee Hong
Department Of Bio-resources And Pnu-special Animal Biotechnology Center College Of Natural Resources & Life Science Pusan National University
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Jeong Seong
Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea
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Lee Keun
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, Kyunggi-Do 449-711, Korea
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Kong Jeong
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, Kyunggi-Do 449-711, Korea
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Kong Jeong
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, Kyunggi-Do 449-711, Korea
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Park Young
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, Kyunggi-Do 449-711, Korea
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Kim Sung
Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea
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Lee Keun
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, Kyunggi-Do 449-711, Korea
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Kim Sung
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea
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