Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
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概要
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Using atomic layer deposition (ALD) cycles of NH_3 and WF_6, we have deposited W-N thin films and investigated electrical characteristics of Cu/WN interconnects. Rutherford backscattering spectroscopy reveals that a WN thin film successfully prevents Cu diffusion during annealing at 800 ℃ for 30 min. Electromigration (EM) failure in the Cu interconnects is significantly improved by a WN diffusion barrier: over 90 % of test samples are failed with the Cu/TiN/Ti interconnects, whereas the failure rate of the Cu film on the WN is reduced to less than 13 % under the stress conditions of 9 MA/cm^2 and 225 ℃ and the EM life time is also much extended at the same conditions.v
- 2010-06-23
著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Lee Eui
School of Electrical Engineering, Korea University
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Kim Young
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Chun
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Ju Byeong
School of Electrical engineering, Korea University
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Kim Chun
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Ju Byeong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Lee Eui
School Of Electrical Engineering Korea University:semiconductor Materials And Devices Lab Korea Inst
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Ju Byeong
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Kim Chun
Semiconductor Lab.
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Kim Yong
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Young
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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