Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
スポンサーリンク
概要
- 論文の詳細を見る
It is well known that ferroelectric properties of Pt/SBT and Pt/SBN thin films are degraded due to the Pt catalytic reaction after H_2 annaealing. However, sometimes SBT and SBN film itself may be degraded after the H_2 annaealing. In this work, we have studied interface trap between SBT (or SBN) and Si, effects of bias stress on flat band voltage and asymmetric hystersis shift before and after H_2 annaealing at curie temperature and higher temperature than curie point. As an alternative top electrode, Ir and IrO_2 /SBT (or SBN)/Si structures have been investigated with H_2 annaealing. Also, we will discuss changes in electrical properties after the recovery process.
- 社団法人電子情報通信学会の論文
- 2002-06-24
著者
-
Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
-
Kim Chun
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
-
Kim S
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
-
Kim Seong-il
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
-
Kim Seong-ii
Semiconductor Materials Research Center Korea Institute Of Science And Technology
-
Kim Chun
Semiconductor Lab.
-
Kim Ik-soo
Semiconductor Lab.
-
Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
-
Lee Chang
Dept. Of Interaction Design. Graduate School Of Techno Design Kookmin University
-
Choi Hoon
Semiconductor Lab.
-
Lee Chang
Department Of Nano And Electronic Physics Kookmin University
-
Lee Chang
Dept. Of Civil Engineering University Of Seoul
-
Lee C.w.
Department Of Nano And Electronic Physics Kookmin University
-
Kim Yong
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
-
Kim S‐i
Korea Inst. Sci. And Technol. Seoul Kor
-
Lee C
Department Of Nano And Electronic Physics Kookmin University
関連論文
- A design of novel IGBT with oblique trench gate (Silicon devices and materials)
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- Direct Transport Measurements through an Ensemble of INAS Self-assembled Quantum Dots
- Facet Evolution of Al_Ga_As/GaAs Multilayers Grown on Mesa-Patterned GaAs Substrate
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
- Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- STUDIES ON CELL-SPECIFIC CYTOTOXICITIES INDUCED BY P-AMINOPHENYL-MERCURIC ACETATE (APMA)
- Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn
- Derivation of Excess Mean-Square Error for Affine Projection Algorithms Using the Condition Number
- Affine Projection Algorithm with Improved Data-Selective Method Using the Condition Number
- Effect of Mixing Ratio of Biodiesels on Fuel Atomization and Combustion Characteristics
- Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
- Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
- A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
- Metal Oxide Semiconductor Field Effect Transistor Characteristics with Iridium Gate Electrode on Atomic Layer Deposited ZrO_2 High-k Dielectrics
- Improvement of the Reliability of a Cu/W-N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W-N Thin Film
- ED2000-66 / SDM2000-66 Improvement of Memory windows in YMnO_3/Si Ferroelectric Gate FET
- ED2000-66 / SDM2000-66 Improvement of Memory windows in YMnO_3/Si Ferroelectric Gate FET
- Tungsten Nanodot Arrays Patterned Using Diblock Copolymer Templates
- Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
- Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
- Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN
- Electrical Characteristics of Pt/SrBi_2 Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
- Improvement of Fuzzy ARTMAP Performance in Noisy Input Environment Using Weighted-Average Learning
- Growth and Characterization of Triangular InGaAs/GaAs Quantum Wire Structures Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope
- Effects of Morphological Changes of Pt/SrBi_2Ta_2O_9 Interface on the Electrical Properties of Ferroelectric Capacitor
- Electrical Properties of Pt/SrBi_2Ta_2O_9/CeO_2/SiO_2/Si Structure for Nondestruetive Readout Memory
- N_2^+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Efffect Transistors Using a Pt/SrBi_2Ta_2O_9/Y_2O_3/Si Structure
- Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi_2Ta_2O_9-Y_2O_3-Si Structure
- Composite Double Arm Type Robot Hands and Wrists for Handling Large Glass Panel Display
- The Analysis of W Etch Residue
- The Characteristics of Nitrogen Implanted Tungsten Film as a New Diffusion Barrier for Metal Organic Chemical Vapor Deposited Cu Metallization
- Characteristics of Quantum wire structures grown by low pressure MOCVD
- Characteristics of Quantum wire structures grown by low pressure MOCVD
- Ellipsometric Study of Self-Assembled InAs/GaAs Quantum Dots
- Highly Conductive Tungsten Thin Films Prepared by the Plasma-Assisted Silane Reduction Process
- Effects of NH_3 Plasma Treatment on Methyl Silsequioxane for Copper Multi-Level Interconnect(Semiconductors)
- E03 Formativeness in view of numerical study in the Book of Changes : A study about possibility of Formativeness analytics from numerical study in the book of changes
- Sensitivity of Reinforced Concrete Frames to Uncertain Component Capacity
- Electrical Characteristics of Pt/SrBi_2Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
- Filtering of White Noise Using the Interacting Multiple Model for Speech Enhancement
- Influence of Sustain Pulse-Width on Electrical Characteristics and Luminous Efficiency in Surface Discharge of AC-PDP (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- Performance of the Plasma-Deposited Tungsten Nitride Diffusion Barrier for Al and Au Metallization
- Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge_2Sb_2Te_5
- Muscle Based Gene Therapy and Tissue Engineering for Tibial Physeal Defects
- プラズマ溶射されたNi-Cr-Si-B/WC-12Co混合皮膜の摩耗機構に関する研究
- Advantages of RuO_x Bottom Electrode in the Dielectric and Leakage Characteristics of (Ba,Sr)TiO_3 Capacitor
- Effects for the applied electricfield on characteristics of spray
- A Proposal of Pt/SrBi_2Ta_2O_9/CeO_2/Si Structure for Non Destructive Read Out Memory Devices
- High Performance of W-B-N Schottky Contact to GaAs
- Transmission Electron Microscopy Study on the Crystallization of Sb–Se–Te Ternary Alloys
- A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
- Microstructural Investigation of SexTe100-x Thin Films Deposited on Si(100) Substrates by X-ray Diffractometer and Transmission Electron Microscopy Analysis
- Effect of Nitrogen Implantation with Low Dose on Thermomechanical Properties and Microstructure of Ge2Sb2Te5 Films
- Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge2Sb2Te5
- Phase Transition Behavior of Ge–Bi–Te Thin Films from an NaCl to Rhombohedral Structure
- Metal Oxide Semiconductor Field Effect Transistor Characteristics with Iridium Gate Electrode on Atomic Layer Deposited ZrO2 High-$k$ Dielectrics
- Improvement of the Reliability of a Cu/W–N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W–N Thin Film
- N2+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
- Electrical Properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si Structure for Nondestructive Readout Memory
- Growth and Characterization of Triangular InGaAs/GaAs Quantum Wire Structures Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Investigations of the Air Gap Embedded Green InGaN/GaN Light-Emitting Diodes