The Analysis of W Etch Residue

概要

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The samples with W/Ti/TiN/BPSG, TiN/BPSG and BPSG structure was etched by SF_6 and Cl_2 chemistry to study etch residue. Each sample after etching or etching followed by post-treatments such as PR-strip, post-cleaning (CH_3COOH/NH_4OH/H_2O) and UV-Ozone ashing was analyzed by XPS and SEM. It was revealed that most of the residue was formed during etching of titanium nitride film. In case of samples without post-treatments, the residue had complicate bonding structure of WO_x, (TiO)_xF_y and CF_x and the main bonding structure was considered as (TiO)_xF_y. The residue was alomst removed by continuous treatments and changed new bonding structure of TiO_x.
社団法人電子情報通信学会の論文
1995-07-28