A design of novel IGBT with oblique trench gate (Silicon devices and materials)
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概要
- 論文の詳細を見る
- 2010-06-30
著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Lee Eui
School of Electrical Engineering, Korea University
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Kim Young
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Chun
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Oh Juhyun
School Of Electrical Engineering Korea University
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Chun Dae
School Of Electrical Engineering Korea University
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Ju Byeong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Sung Man
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
関連論文
- A design of novel IGBT with oblique trench gate (Silicon devices and materials)
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