Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-07-15
著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim S
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
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Kim Seong-il
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Choi I‐h
Department Of Materials Science Korea University
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Choi In-hoon
Department Of Materials Science Korea University
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Kim J
School Of Electrical Engineering Kobe University
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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KIM Je
School of Electrical Engineering, Kobe University
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KIM Sangsig
School of Electrical Engineering, Korea University
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SUNG Man
School of Electrical Engineering, Korea University
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Kim Yong
Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology
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Choi In-hoon
Department Of Material Science Korea University
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Sung Man
School Of Electrical Engineering Korea University
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Kim Je
School Of Electrical Engineering Kobe University
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