Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge2Sb2Te5
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概要
- 論文の詳細を見る
The Ge2Sb2Te5 thin films deposited by a sputtering method on a SiO2/Si substrate were annealed and subjected to transmission electron microscopy in order to investigate the crystallization and growth of the metastable Ge2Sb2Te5. The metastable Ge2Sb2Te5 was initially crystallized with 10-nm-sized grains and its sheet resistance was still as high as in the amorphous state. Sheet resistance was abruptly decreased at the grain growth stage after the crystallization.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-01-15
著者
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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YOUM Min
Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology
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Lee Jeong
Department Of Anesthesiology And Pain Medicine Yonsei University College Of Medicine
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Park Yu
Department Of Anatomy And Brain Korea 21 Project For Medical Science Yonsei University College Of Medicine
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Lee Jeong
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
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Park Yu
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
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Youm Min
Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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