A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
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概要
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In this paper, a new IGBT structure that has oblique trench gate is proposed. This oblique trench gate IGBT(OTIGBT) has higher breakdown voltage and lower on-state voltage drop characteristic than conventional IGBT. The proposed OTIGBT distributes the electric field which is concentrated at the trench edge to the curve of the p-base region. Moreover, this proposed structure can reduce the on-state voltage drop due to the reduced JFET area that is existed in the planar gate IGBT structure. Simulation results indicate the breakdown voltage of the OTIGBT is increased compared to the trench gate IGBT. The on-state voltage drop is reduced than planar gate IGBT which is similar to the on-state voltage drop of trench gate IGBT.
- 2010-06-23
著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Lee Eui
School of Electrical Engineering, Korea University
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Kim Young
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Chun
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Chun
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Oh Juhyun
School Of Electrical Engineering Korea University
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Chun Dae
School Of Electrical Engineering Korea University
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Ju Byeong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Sung Man
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Lee Eui
School Of Electrical Engineering Korea University:semiconductor Materials And Devices Lab Korea Inst
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Ju Byeong
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Sung Man
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Kim Chun
Semiconductor Lab.
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Kim Yong
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Young
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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