Ju Byeong | Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
スポンサーリンク
概要
- JU Byeong Kwonの詳細を見る
- 同名の論文著者
- Semiconductor Materials and Devices Lab, Korea Institute of Science and Technologyの論文著者
関連著者
-
Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
-
Lee Eui
School of Electrical Engineering, Korea University
-
Kim Young
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
-
Kim Chun
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
-
Ju Byeong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
-
Kim Chun
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
-
Lee Eui
School Of Electrical Engineering Korea University:semiconductor Materials And Devices Lab Korea Inst
-
Ju Byeong
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
-
Kim Chun
Semiconductor Lab.
-
Kim Yong
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
-
Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
-
Kim Young
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
-
Oh Juhyun
School Of Electrical Engineering Korea University
-
Chun Dae
School Of Electrical Engineering Korea University
-
Sung Man
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
-
Ju Byeong
School of Electrical engineering, Korea University
-
Sung Man
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
著作論文
- A design of novel IGBT with oblique trench gate (Silicon devices and materials)
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)