Lee Eui | School Of Electrical Engineering Korea University:semiconductor Materials And Devices Lab Korea Inst
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概要
- Lee Eui Bokの詳細を見る
- 同名の論文著者
- School Of Electrical Engineering Korea University:semiconductor Materials And Devices Lab Korea Instの論文著者
関連著者
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Kim Yong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Lee Eui
School of Electrical Engineering, Korea University
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Kim Young
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Chun
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Kim Chun
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Ju Byeong
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Lee Eui
School Of Electrical Engineering Korea University:semiconductor Materials And Devices Lab Korea Inst
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Ju Byeong
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Kim Chun
Semiconductor Lab.
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Kim Yong
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Kim Yong
Semiconductor Devices Laboratory Korea Institute Of Science And Technology
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Kim Young
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
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Ju Byeong
School of Electrical engineering, Korea University
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Oh Juhyun
School Of Electrical Engineering Korea University
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Chun Dae
School Of Electrical Engineering Korea University
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Sung Man
Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology
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Sung Man
Semiconductor Materials And Devices Lab Korea Institute Of Science And Technology
著作論文
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)