Radio-Frequency Electrical Characteristics of Single Layer Graphene
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概要
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The radio-frequency (RF) electrical response of monolayer graphene is reported. From the measured $S$-parameter in the range of 10 MHz to 50 GHz, a simple equivalent resistor–inductor–capacitor (R–L–C) circuit is established to analyze frequency impedance. The impedance magnitude shows significant frequency dependence only below 10 GHz and this dispersive behavior is originated from the graphene–metal contact. Above 10 GHz, there is no distinctive change in overall characteristic of impedance due to the absence of the skin effect and low intrinsic kinetic inductance of graphene. These results show that graphene could be a promising candidate for high-speed device application.
- 2009-09-25
著者
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Kim Moonil
School Of Electrical Engineering Korea University
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Seo Sunae
Semiconductor Device And Material Laboratory Samsung Advanced Institute Of Technology (sait)
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Kim Dong
Semiconductor Materials Laboratory Korea Institute Of Science And Technology
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Lee Kook
School Of Electrical Engineering Korea University
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Jeon Dae-Young
Semiconductor Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Gyeonggi-do 446-712, Korea
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Seo Sunae
Semiconductor Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Gyeonggi-do 446-712, Korea
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Chung Hyun-Jong
Semiconductor Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Gyeonggi-do 446-712, Korea
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Woo Yun-Sung
Semiconductor Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Gyeonggi-do 446-712, Korea
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Lee Kook
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
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Kim Dong
Semiconductor Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Gyeonggi-do 446-712, Korea
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Kim Moonil
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
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