Retention Mechanism of Localized Silicon–Oxide–Nitride–Oxide–Silicon Embedded NOR Device
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概要
- 論文の詳細を見る
Reliability studies of localized oxide–nitride–oxide memory (LONOM) devices are presented. The observed reduction in channel threshold voltage as a result of the retention charge loss of a programmed cell is demonstrated in terms of vertical leakage paths. Despite the apparent controversy of charge transport with nitride read-only memory (NROM) devices, the vertical paths are evidently observed via the channel and junction threshold voltage changes, which were monitored using $I_{\text{ds}}$–$V_{\text{ds}}$ curves and gate-induced drain leakage (GIDL) measurements, visualizing the internal status of interface charges and stored charges in a nitride layer.
- Japan Society of Applied Physicsの論文
- 2006-10-25
著者
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Kim Jinhee
System Lsi Division Semiconductor Business Samsung Electronics Co. Ltd.
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Seo Sunae
Semiconductor Device And Material Laboratory Samsung Advanced Institute Of Technology (sait)
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JEONG Younseok
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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Jeong Younseok
Semiconductor Device And Material Laboratory Samsung Advanced Institute Of Technology (sait)
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Kim Chungwoo
Semiconductor Device And Material Laboratory Samsung Advanced Institute Of Technology (sait)
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Hyun JaeWoong
Semiconductor Device and Material Laboratory, Samsung Advanced Institute of Technology (SAIT), Mt 14
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Chae HeeSoon
Semiconductor Device and Material Laboratory, Samsung Advanced Institute of Technology (SAIT), Mt 14
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Um MyungYoon
System LSI Division, Semiconductor Business, Samsung Electronics Co., Ltd., Korea
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Lee ByoungJin
System LSI Division, Semiconductor Business, Samsung Electronics Co., Ltd., Korea
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Kim KiChul
System LSI Division, Semiconductor Business, Samsung Electronics Co., Ltd., Korea
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Cho InWook
System LSI Division, Semiconductor Business, Samsung Electronics Co., Ltd., Korea
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Bae GeumJong
System LSI Division, Semiconductor Business, Samsung Electronics Co., Ltd., Korea
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Lee NaeIn
System LSI Division, Semiconductor Business, Samsung Electronics Co., Ltd., Korea
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Lee Naein
System Lsi Division Semiconductor Business Samsung Electronics Co. Ltd.
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Kim Kichul
System Lsi Division Semiconductor Business Samsung Electronics Co. Ltd.
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Cho Inwook
System Lsi Division Semiconductor Business Samsung Electronics Co. Ltd.
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Bae Geumjong
System Lsi Division Semiconductor Business Samsung Electronics Co. Ltd.
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Chae Heesoon
Semiconductor Device And Material Laboratory Samsung Advanced Institute Of Technology (sait)
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Um Myungyoon
System Lsi Division Semiconductor Business Samsung Electronics Co. Ltd.
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Lee Byoungjin
System Lsi Division Semiconductor Business Samsung Electronics Co. Ltd.
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Hyun Jaewoong
Semiconductor Device And Material Laboratory Samsung Advanced Institute Of Technology (sait)
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