Photomodulation Spectroscopy in GaSe
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概要
- 論文の詳細を見る
Photoabsorption and photoreflectance spectra have been measured in a semicon-ducting layer-compound GaSe in the exciton energy region at temperatures between?300K and ?80K. The photomodulation at the frequency of I0Hz?200kHzhas been found to be useful as the means of thermomodulation without a contact. Ahigh-frequency photoabsorption experiment at the modulatiorn frequency of 5 MHzhas also been performed using a pair of picosecond dye lasers. In this experiment,time behavior of the photomodulation signal has been determined from thedependence of the signal intensity on the delay time of the probe pulse and also on thephase of the lock-in amplifier. The dominant modulation mecltanisms of this experiment have been identified as the spectral variation due to the reduction of the built-insurface electric field and the exciton-exciton collision.
- 社団法人日本物理学会の論文
- 1987-03-15
著者
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Lee C
Opto-mechatronics Team Digital Media R&d Center Samsung Electronics Co. Ltd.
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KUSHIDA Takashi
Research Laboratory of Resources Utilization, Tokyo Institute of Technology
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Kushida Takashi
Department Of Physics Faculty Of Science Osaka University
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Kushida Takashi
Department Of Physics Osaka University
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Lee Chul
Department Of Life Science Gwangju Institute Of Science And Technology
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Lee Chul
Department Of Chemical Engineering Korea University
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Kushida Takashi
Department of Physics,Osaka University
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