Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 2000-11-15

著者

• Park Sung

  Samsung Advanced Institute Of Technology

• Choh Sung

  Department Of Physics Korea University

• PARK Il-W.

  Korea Basic Science Institute, Seoul Branch, Korea Univ.

• Park Il-w.

  Korea Basic Science Institute Seoul Branch Korea Univ.

• Park Sung

  Samsung Advanced Institute Of Technology:department Of Physics Korea University

関連論文

• Power and Skew Aware Point Diffusion Clock Network
• Free Carrier Concentration Gradient along the c-Axis of a Freestanding Si-doped GaN Single Crystal
• Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Efffect Transistors Using a Pt/SrBi_2Ta_2O_9/Y_2O_3/Si Structure
• Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy
• EPR Study on the Mn center in Aged Electroluminescent Device with Electron-beam Evaporated ZnS:Mn Phosphor Layer
• Free Carrier Concentration Gradient along the $c$-Axis of a Freestanding Si-doped GaN Single Crystal

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