Free Carrier Concentration Gradient along the $c$-Axis of a Freestanding Si-doped GaN Single Crystal
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概要
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The charge carrier concentration variance in a freestanding Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) has been investigated. A transverse micro-Raman scattering measurement along the [0001] $c$-axis on the cross section of the n-type GaN was performed to obtain the profile of the free carrier concentration. The analysis of the coupled modes of plasmons and longitudinal optical (LO) phonons revealed the presence of a free carrier concentration gradient along the $c$-axis, which gradually varies from $2.3\times 10^{17}$ (N face) to $9.3\times 10^{17}$ cm-3 (Ga face). The possible physical origins of the charge carrier concentration gradient in the GaN crystal were discussed on the basis of current theories and experimental results of the growth mechanism of an $n$-doped GaN single crystal.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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Park Sung
Samsung Advanced Institute Of Technology
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YOON M.
Seoul Branch, Korea Basic Science Institute
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CHOI H.
Seoul Branch, Korea Basic Science Institute
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Koh Eui
Seoul Branch Korea Basic Science Institute
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Park Il-woo
Seoul Branch Korea Basic Science Institute
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Park Il-Woo
Seoul Branch, Korea Basic Science Institute, Seoul 136-701, Korea
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Park Sung
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
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