Free Carrier Concentration Gradient along the c-Axis of a Freestanding Si-doped GaN Single Crystal
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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Park Sung
Samsung Advanced Institute Of Technology
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YOON M.
Seoul Branch, Korea Basic Science Institute
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PARK Il-Woo
Seoul Branch, Korea Basic Science Institute
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CHOI H.
Seoul Branch, Korea Basic Science Institute
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KOH Eui
Seoul Branch, Korea Basic Science Institute
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Park Il-woo
Seoul Branch Korea Basic Science Institute
関連論文
- Power and Skew Aware Point Diffusion Clock Network
- Free Carrier Concentration Gradient along the c-Axis of a Freestanding Si-doped GaN Single Crystal
- Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy
- Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- Free Carrier Concentration Gradient along the $c$-Axis of a Freestanding Si-doped GaN Single Crystal