YOON Doo-Hyeb | Optoelectronic Materials Team, Telecommunications Basic Research Institute, Electronics and Telecomm

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概要

関連著者

YOO Ji-Beom
Department of Material Engineering, Sungkyunkwan University
Seong Tae-yeon
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)
Yoo Ji-beom
Department Of Materials Engineering Sung Kyun Kwan University
YOON Doo-Hyeb
Optoelectronic Materials Team, Telecommunications Basic Research Institute, Electronics and Telecomm
LEE Kyu-Seok
Optoelectronic Materials Team, Telecommunications Basic Research Institute, Electronics and Telecomm
Seong Tae-yeon
Department Of Materials Science And Engineering And Centre For Electronic Materials Research Kwangju
Lee Kyu-seok
Optoelectronic Materials Team Telecommunications Basic Research Institute Electronics And Telecommun
Yoon Doo-hyeb
Optoelectronic Materials Team Telecommunications Basic Research Institute Electronics And Telecommun
Yoo Ji-beom
Department Of Material Engineering Sungkyunkwan University

著作論文

Reduction of Threading Dislocations in InGaN/GaN Double Heterostructure through the Introduction of Low-Temperature GaN Intermediate Layer

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