Bi-Mode Breakdown Test Methodology of Ultrathin Oxide
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概要
- 論文の詳細を見る
The breakdown detections of ultrathin oxide (1.4–2 nm) using a fast voltage ramp have been studied. It was found that the breakdown voltage test of deep sub-micron technology requires the reduction of the gate area of test patterns and therefore the increase of the number of structures due to a large inversion gate current at a low electrical field (${>}0.1$ A/cm2 at 1 V) caused by the scaling down of oxide thickness. The gate current in accumulation mode is smaller than that in inversion mode by more than two orders of magnitude at a low applied voltage (1 V). The bi-mode model proposed in this paper applies a voltage stress in the inversion mode and detects failure in the accumulation mode to enhance the robustness of the breakdown test and reduce the possibility of pseudo breakdown failure. With the proposed method, a shorter test time with an increased test pattern area to improve the efficiency of the breakdown test of ultrathin oxide is achieved.
- 2003-12-15
著者
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Sun Jack
Taiwan Semiconductor Manufacturing Co. R&d
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Lee Kuo-hua
Taiwan Semiconductor Manufacturing Co. R&d
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Wu Shien-yang
Taiwan Semiconductor Manufacturing Co. R&d
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Chiou Bi-shiou
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Chen Yung-shun
Taiwan Semiconductor Manufacturing Co. R&d
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Su Hung-der
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Ko Chin-yuan
Taiwan Semiconductor Manufacturing Co. Ra
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Chao Chih-ping
Taiwan Semiconductor Manufacturing Co. R&d
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Chang Ming-hsung
Taiwan Semiconductor Manufacturing Co. R&d
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See Yee-Chaung
Taiwan Semiconductor Manufacturing Co., R&D, Hsin-Chu 300, Taiwan, ROC
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Lee Kuo-Hua
Taiwan Semiconductor Manufacturing Co., R&D, Hsin-Chu 300, Taiwan, ROC
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Sun Jack
Taiwan Semiconductor Manufacturing Co., R&D, Hsin-Chu 300, Taiwan, ROC
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Ko Chin-Yuan
Taiwan Semiconductor Manufacturing Co., RA, Hsin-Chu 300,Taiwan, ROC
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Chiou Bi-Shiou
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu 300, Taiwan, ROC
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Chen Yung-Shun
Taiwan Semiconductor Manufacturing Co., R&D, Hsin-Chu 300, Taiwan, ROC
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Su Hung-Der
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu 300, Taiwan, ROC
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Wu Shien-Yang
Taiwan Semiconductor Manufacturing Co., R&D, Hsin-Chu 300, Taiwan, ROC
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Chao Chih-Ping
Taiwan Semiconductor Manufacturing Co., R&D, Hsin-Chu 300, Taiwan, ROC
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