Improving Electrical Characteristics of High-k NiTiO Dielectric with Nitrogen Ion Implantation

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概要

• 論文の詳細を見る
• 2006-09-15

著者

• CHAO Tien-Sheng

  Department of Electrophysics, National Chiao Tung University

• Chao Tien-sheng

  Department Of Electrophysics National Chiao Tung University

• Peng Wu-chin

  Department Of Electronic Engineering Feng Chia University

• Yang Chin-hao

  The Graduate Institute Of Electrical And Communications Engineering Feng Chia University

• YANG Wen-Luh

  Department of Electronic Engineering, Feng Chia University

• Yang Wen-luh

  Department Of Electronic Engineering Feng Chia University

• CHEN Shine-China

  Department of Electronic Engineering, Feng Chia University

• Chen Shine-china

  Department Of Electronic Engineering Feng Chia University

関連論文

• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal-Oxide-Semiconductor Field Effect Transistors
• The Effects of Dielectric Type and Thickness on the Characteristics of Dynamic Threshold Metal Oxide Semiconductor Transistors
• Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses : Mobility, Simulation, Size Dependence, and Hot Carrier Stress
• Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Performance Improvement of Nickel Salicided n-Type Metal Oxide Semiconductor Field Effect Transistors by Nitrogen Implantation : Semiconductors
• Reduction of Nickel-Silicided Junction Leakage by Nitrogen Ion Implantation : Semiconductors
• Improving Electrical Characteristics of High-k NiTiO Dielectric with Nitrogen Ion Implantation
• Determination of Ultrathin Oxide Thickness by Subthreshold Swing
• Robust Data Retention and Superior Endurance of Silicon-Oxide-Nitride-Oxide-Silicon-Type Nonvolatile Memory with NH-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer (Special Issue : Solid State Devices and Materials (2))
• Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors
• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors
• The Effects of Dielectric Type and Thickness on the Characteristics of Dynamic Threshold Metal Oxide Semiconductor Transistors
• Performance Enhancement by Local Strain in $\langle 110\rangle$ Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate
• Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Nonvolatile Memory Characteristics with Embedded Hemispherical Silicon Nanocrystals
• Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics
• Suppression of Boron Penetration in P+-Poly-SiGe Gate P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using NH3-Nitrided and N2O-Grown Gate Oxides

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