Characteristics of Polycrystalline Silicon Thin-Film Transistors with Electrical Source/Drain Extensions Induced by a Bottom Sub-Gate

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概要

• 論文の詳細を見る

• Characteristics of polycrystalline silicon thin-film transistors (TFT) with source/drain extensions induced by a bottom sub-gate were explored, high on/off current ratio up to 10^7 could be achieved for both n- and p-channel devices, Nevertheless, the performance is significantly degraded by a marked increase of off-state leakage current when the channel length is scaled below 1 μm. Moreover, a hump in the subthreshold current-voltage regime is observed. After careful analysis, it is found that the leakage current is strongly dependent on the field strength and is not a thermally activated process. A leakage path along the bottom interface of the poly-Si channel layer is proposed to explain these results.

• 社団法人応用物理学会の論文
• 2002-05-15

著者

• HUANG Tiao-Yuan

  Institute of Electronics, National Chiao Tung University

• LIN Horng-Chih

  National Nano Device Labs.

• CHEN Guo-Hua

  Institute of Vegetables and Flowers, Chinese Academy of Agricultural Sciences

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics. National Chiao-tung University:national Nano Device Labs.

• Lin Horng-chih

  National Nano Device Lab.

• LEI Tan-Fu

  Institute of Electronics, National Chiao Tung University

• Lei Tan-fu

  Institute Of Electronics. National Chiao-tung University

• Chen Guo-hua

  Institute Of Electronics. National Chiao-tung University

• YU Michael

  Institute of Electronics. National Chiao-Tung University

• Lei Tan-fu

  Institute And Department Of Electronics Engineering National Chiao Tung University

• Lin Horng-chih

  National Chiao Tung University

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