Improvement of Electrical Characteristics for Novel Fluorine-Incorporated Poly-Si TFTs with TiN Gate Electrode and Pr_2O_3 Gate Dielectric

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2007-09-19

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Combined Negative Bias Temperature Instability and Hot Carrier Stress Effects in Low Temperature Poly-Si Thin Film Transistors
A Novel Process-Compatible Floating Channel Crystallization Technique to Fabricate High-Performance Poly-Si TFTs
Improvement of Electrical Characteristics for Novel Fluorine-Incorporated Poly-Si TFTs with TiN Gate Electrode and Pr_2O_3 Gate Dielectric
Fringing Electric Field Effect on 65-nm-Node Fully Depleted Silicon-on-Insulator Devices
The Characteristics and Reliability of Multi-channel Poly-Si TFTs
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Electrical Properties of High-$\kappa$ Praseodymium Oxide Polycrystalline Silicon Thin-Film Transistors with Nitrogen Implantation
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