Nonvolatile Flash Memory Devices Using CeO2 Nanocrystal Trapping Layer for Two-Bit per Cell Applications

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概要

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• In this study, we demonstrated the characteristics of nonvolatile silicon oxide nitride oxide silicon (SONOS)-type memories using cerium oxide (CeO2) nanocrystals as a charge storage agent. We observed that the shape of the formed CeO2 nanocrystals is nearly spherical and that their size is almost similar identical to their high density of $5\times 10^{11}$ cm-2. Such CeO2 nanocrystals were formed by depositing a thin CeO2 film of ca. 2–3 nm thickness using an evaporater gun system and then rapid thermal annealing (RTA) in O2 ambient at 900 °C for 1 min. The fabricated memory devices show good electrical properties in terms of a sufficiently large memory window (${>}2$ V), program/erase (P/E) speed (0.1/1 ms), retention time up to $10^{4}$ s with only 5% charge loss, and endurance after $10^{5}$ cycles with small memory window narrowing and two-bit operation. These properties suggest that the nonvolatile SONOS-type memories with the CeO2 nanocrystal trapping agent can be applied in future flash memories.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-06-15

著者

• Huang Jiun-jia

  Institute Of Electronics National Chiao-tung University

• Chien Chao-hsin

  Institute Of Electronics National Chiao-tung University

• Lei Tan-fu

  Institute And Department Of Electronics Engineering National Chiao Tung University

• Yang Shao-Ming

  Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Chien Chao-Hsin

  Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Huang Jiun-Jia

  Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

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