High-$\kappa$ Material Sidewall with Source/Drain-to-Gate Non-overlapped Structure for Low Standby Power Applications
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概要
- 論文の詳細を見る
In this paper, fully depleted silicon-on-insulator (SOI) devices with source/drain extension shifts and a high-$\kappa$ offset spacers were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current $I_{\text{off}}$ significantly by utilizing the extra electron barrier height in the source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current $I_{\text{on}}$ is also sacrificed simultaneously. To overcome this drawback, a high-$\kappa$ offset spacer is used to increase the on-state driving current $I_{\text{on}}$ effectively by enhancing the vertical fringing electric field which elevates the channel voltage drop and reduces series resistance.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-11-15
著者
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Ma Ming-wen
Institute And Department Of Electronics Engineering National Chiao Tung University
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Lei Tan-fu
Institute And Department Of Electronics Engineering National Chiao Tung University
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Lei Tan-Fu
Institute of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Kao Kuo-Hsing
Inst. and Dept. of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Chao Tien-Sheng
Inst. and Dept. of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Huang Jyun-Siang
Inst. and Dept. of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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