High-κ Material Sidewall with Source/Drain-to-Gate Non-overlapped Structure for Low Standby Power Applications

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Ma Ming-wen

  Institute And Department Of Electronics Engineering National Chiao Tung University

• Chao Tien-sheng

  Institute And Department Of Electrophysics National Chiao Tung University

関連論文

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• Fringing Electric Field Effect on 65-nm-Node Fully Depleted Silicon-on-Insulator Devices
• High-κ Material Sidewall with Source/Drain-to-Gate Non-overlapped Structure for Low Standby Power Applications
• NBTI-Stress Induced Grain-Boundary Degradation in Low-Temperature Poly-Si Thin-Film Transistors
• Nonvolatile Memory Characteristics with Embedded Hemispherical Silicon Nanocrystals
• High-$\kappa$ Material Sidewall with Source/Drain-to-Gate Non-overlapped Structure for Low Standby Power Applications

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