Electrical Properties of High-$\kappa$ Praseodymium Oxide Polycrystalline Silicon Thin-Film Transistors with Nitrogen Implantation

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概要

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• This paper demonstrates the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with high-$\kappa$ praseodymium oxide (Pr2O3) gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Nitrogen atoms with various dosages are implanted into amorphous silicon ($\alpha$-Si) film to passivate the grain boundary trap states during solid-phase crystallization (SPC) annealing. From experimental results, the electrical characteristics of the Pr2O3 poly-Si TFT implanted with the nitrogen dosage of $5\times 10^{12}$ cm-2 could be greatly improved. In addition, a better hot-harrier immunity of high-$\kappa$ Pr2O3 poly-Si TFT could be also obtained.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-02-25

著者

• Chang Hong-ren

  Institute Of Electronics National Chiao-tung University

• CHIOU Bi-Shiou

  Institute of Electronics, National Chiao-Tung University

• Deng Chih-kang

  Institute Of Electronics National Chiao-tung University

• Deng Chih-Kang

  Institute of Electronics, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Chang Hong-Ren

  Institute of Electronics, National Chiao-Tung University, Hsinchu 30010, Taiwan

関連論文

• Improvement of Electrical Characteristics for Novel Fluorine-Incorporated Poly-Si TFTs with TiN Gate Electrode and Pr_2O_3 Gate Dielectric
• Analysis of Average Transport Critical Current Density of Oxide Superconductors Deposited on a Silver Base
• Optimization on Layout Structures of LTPS TFTs for On-Panel ESD Protection Design
• Electrical Enhancement of Polycrystalline Silicon Thin-Film Transistors Using Fluorinated Silicate Glass Passivation Layer
• Electrical Properties of High-$\kappa$ Praseodymium Oxide Polycrystalline Silicon Thin-Film Transistors with Nitrogen Implantation
• High-Performance Solid-Phase Crystallized Polycrystalline Silicon Thin-Film Transistors with Floating-Channel Structure

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